PZT2907A pnp silicon silicon planar medium power transistor elektronische bauelemente 31-may-2010 rev. b page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. base emitter collector b c e rohs compliant product a suffix of ?-c? specifies halogen & lead-free description ? the PZT2907A is designed for general purpose amplifier and high-speed switching, medium power switching applications. marking maximum ratings (t a =25 c, unless otherwise specified) parameter symbol value unit collector to base voltage v cbo -60 v collector to emitter voltage v ceo -60 v emitter to base voltage v ebo -5 v collector current i c -600 ma total power dissipation p d 1.5 w junction, storage temperature t j , t stg +150, -55 ~ +150 electricalcharacteristics (t a =25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions collector - base breakdown voltage v (br)cbo -60 - - v i c = -10ua collector - emitter breakdown voltage v (br)ceo -60 - - v i c = -10ma emitter - base breakdown voltage v (br)ebo -5 - - v i c = -10ua collector cut - off current i cbo - - -10 na v cb = -50v emitter cut - off current i cex - - -50 na v ce = -30v, v be = -0.5v collector - emitter saturation voltage v ce(sat)1 - -0.2 -0.4 v i c = -150ma, i b = -15ma v ce(sat)2 - -0.5 -1.6 v i c = -500ma, i b = -50ma base - emitter voltage v be(sat) - - -1.3 v i c = -150ma, i b = -15ma v be(sat) - - -2.6 v i c = -500ma, i b = -50ma dc current gain h fe1 75 - - v ce = -10v, i c = -100 ua h fe2 100 - - v ce = -10v, i c = -1ma h fe3 100 - - v ce = -10v, i c = -10ma h fe4 100 180 300 v ce = -10v, i c = -150ma h fe5 50 - - v ce = -10v, i c = -500ma transition frequency f t 200 - - mhz v cb = -20v, i c = -50ma, f =100 mhz collector output capacitance c ob - - 8 pf v cb = -10 v, f = 1 mhz *pulse test pulse width Q 380 us, duty cycle Q 2 % ref. millimeter ref. millimeter min. max. min. max. a 6.30 6.70 g 0.02 0.10 b 6.70 7.30 h 1.50 2.00 c 3.30 3.70 j 0.25 0.35 d 1.42 1.90 k 0.85 1.05 e 4.60 ref. l 2.30 ref. f 0.60 0.80 m 2.90 3.10 i 0.02 0.10 n 13 typ. o 0 10 sot-223 2907a ???? ? = date code
PZT2907A pnp silicon silicon planar medium power transistor elektronische bauelemente 31-may-2010 rev. b page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
|
